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Application of Electron Microscope and EBSD in The Study of Crystal Orientations and Properties
Application of Electron Microscope and EBSD in The Study of Crystal Orientations and Properties
Definition and Characteristics of Crystals: Crystals are materials formed by the regular and periodic arrangement of particles (molecules, atoms, ions) in three-dimensional space. Crystals can be classified into single crystals and polycrystals. The formation of crystals involves the process of particles arranging themselves in a regular pattern. The regular arrangement of particles gives rise to a structured framework inside the crystal, making crystals solids with a specific lattice structure. Crystals exhibit regular geometric shapes, have fixed melting points, and display anisotropic properties such as mechanical strength, thermal conductivity, and thermal expansion. Crystals are abundant in nature, and most solid materials found in nature are crystals. Gases, liquids, and amorphous materials can also transform into crystals under suitable conditions. X-ray diffraction is commonly used to identify whether a material is a crystal or not. Melting Point and Distribution of Crystals:  The regular arrangement of atoms in crystals contributes to their fixed melting and solidification points, which is a distinguishing feature of crystals compared to amorphous materials. Crystals are diverse in morphology in nature, ranging from common substances like salt and sugar, minerals that make up the Earth's crust, to metals and semiconductor materials. Electron Microscopes and EBSD techniques can help understand the stability of crystals under different conditions and provide scientific insights for material selection and applications.   Single Crystals and Polycrystals: A single crystal consists of a continuous crystal lattice where the atomic arrangement remains consistent throughout the crystal, resulting in the anisotropic properties of the crystal. Single crystals are ideal for certain applications, such as silicon single crystals used as the foundation material for integrated circuits in the semiconductor industry.   Polycrystals, on the other hand, are composed of multiple grains with different orientations. Although the individual grains possess the same crystal lattice, their orientations are random, resulting in a polycrystal without macroscopic anisotropy. However, under specific processing conditions, the grains in polycrystals can align preferentially along a specific direction, forming a preferred orientation, which is known as crystallographic texture. Crystallographic texture can enhance the properties of materials in specific directions. For example, control of texture in metal processing can improve the material's ductility or strength. Analytical laboratories, such as the GoldTest Lab, provide precise analysis and testing of single crystals and polycrystals, offering reliable insights for material applications.   Importance of Crystal Orientation:  The analysis of crystal orientation is crucial for understanding material properties. Crystal orientation describes the relative position of crystal axes in t...
Published in Nature! CIQTEK Pulse EPR Boosts The Discovers of New Method to Enhance Bit Performance
Published in Nature! CIQTEK Pulse EPR Boosts The Discovers of New Method to Enhance Bit Performance
Recently, a research paper titled "Phononic modulation of spin-lattice relaxation in molecular qubit frameworks" by the research team led by Dr. Sun Lei from the School of Science at Westlake University was published in Nature Communications.   Figure 1: Hydrogen bonding network and phonon modulation of spin-lattice relaxation in MQFs   The team used CIQTEK pulsed Electron Paramagnetic Resonance (EPR) Spectroscopy X-band EPR100 and W-band EPR-W900 to characterize two molecular qubit framework materials containing semi-quinone radicals.   Figure 2: Spin dynamic properties of MgHOTP and TiHOTP   They discovered that hydrogen bonding networks in these materials led to decreased structural rigidity, resulting in sub-terahertz optical phonons, reduced Debye temperature, increased acoustic phonon density of states, and promoted spin-lattice relaxation. Deuterium substitution in the hydrogen bonding network further lowered the optical phonon frequencies and shortened the spin-lattice relaxation time.   Figure 3: Vibrational spectra of MgHOTP and TiHOTP   Based on these findings, the researchers proposed a molecular qubit framework design to control phonon dispersion precisely, suppress spin-lattice relaxation, and improve qubit performance. This achievement provides new insights and opportunities for solid-state integration and quantum information applications of molecular electron spin qubits.     Figure 4: Spin lattice relaxation mechanism of MgHOTP and TiHOTP Figure 5: Influence of deuterium substitution in the hydrogen bonding network on low-frequency optical phonons and spin-lattice relaxation in MgOTP   In summary, this study revealed that the structural rigidity of molecular qubit framework materials can be used to control phonon dispersion, suppress spin-lattice relaxation, and improve quantum coherence and the applicable temperature range. The research findings can potentially advance the solid-state integration and molecular quantum information technology of molecular electron spin qubits.
Application of TEM and EBSD in Recrystallization Studies
Application of TEM and EBSD in Recrystallization Studies
What is the Recrystallization Process?   Recrystallization is an important phenomenon in materials science that involves the microstructural recovery of material after plastic deformation. This process is crucial for understanding material properties and optimizing processing techniques.   Mechanisms and Classification of Recrystallization   Recrystallization processes are typically triggered by heat treatment or thermal deformation and involve the natural recovery of materials after the generation of defects during deformation. Defects such as dislocations and grain boundaries promote the reduction of system-free energy at high temperatures through dislocation rearrangement and annihilation, leading to the formation of new grain structures. Recrystallization can be classified into static recrystallization (SRX) and dynamic recrystallization (DRX). SRX occurs during annealing processes, while DRX takes place during thermal deformation. Furthermore, recrystallization can be further subdivided based on specific mechanisms, such as continuous dynamic recrystallization (CDRX), discontinuous dynamic recrystallization (DDRX), geometric dynamic recrystallization (GDRX), and metadynamic recrystallization (MDRX). These classifications are not strictly defined, and researchers may have different interpretations.   Factors influencing recrystallization   The recrystallization process is influenced by various factors, including the stacking fault energy (γSFE), initial grain size, thermal processing conditions, and second-phase particles. The magnitude of the stacking fault energy determines the dislocation breakdown and mobility, thereby affecting the recrystallization rate. Smaller initial grain sizes and suitable thermal processing conditions, such as high temperature and low strain rates, facilitate recrystallization. Second-phase particles can significantly influence the recrystallization process by hindering grain boundary motion.   Application of imaging techniques   EBSD and TEM are two classic imaging techniques used in recrystallization studies. EBSD analyzes the distribution and percentage of recrystallized grains using the DefRex map, although resolution limitations may pose accuracy issues. TEM, on the other hand, provides a direct observation of material substructures, such as dislocations, offering a more intuitive perspective for recrystallization studies.   Application of EBSD in recrystallization studies   EBSD is used to determine whether grains have undergone recrystallization by observing grain boundaries. For example, in the DefRex maps of forged TNM alloys, grains surrounded by high-angle boundaries are typically considered recrystallized grains. This technique provides detailed information about grain orientations and grain boundary types, aiding in the understanding of microstructural changes during recrystallization.   BC+GB (grain boundary) map of forged TiAl alloy  ...
Which microscope is more suitable for you? TEM or SEM
Which microscope is more suitable for you? TEM or SEM
Transmission Electron Microscopes (TEM) and Scanning Electron Microscopes (SEM) are indispensable tools in modern scientific research. Compared to optical microscopes, electron microscopes offer higher resolution, allowing for the observation and study of specimens' microstructure at a smaller scale.   Electron microscopes can provide high-resolution and high-magnification images by utilizing the interactions between an electron beam and a specimen. This enables researchers to obtain critical information that may be difficult to obtain through other methods.   Which microscope is more suitable for you?   When choosing the appropriate electron microscopy technique for your needs, various factors need to be considered to determine the best fit. Here are some considerations that can help you make a decision:     Field Emission TEM | TH-F120 Analysis Purpose: First, it is important to determine your analysis purpose. Different electron microscopy techniques are suitable for different types of analysis. a. If you are interested in surface features of a specimen, such as roughness or contamination detection, a Scanning Electron Microscope (SEM) may be more suitable. b. However, a transmission electron microscope (TEM) may be more appropriate if you want to understand the crystal structure of a specimen or detect structural defects or impurities.   Resolution Requirements: Depending on your analysis requirements, you may have specific resolution needs. In this regard, TEM generally has a higher resolution capability compared to SEM. If you need to perform high-resolution imaging, especially for observing fine structures, TEM may be more suitable.   Specimen Preparation: An important consideration is the complexity of specimen preparation. a. SEM specimens typically require minimal or no preparation, and SEM allows for more flexibility in specimen size, as they can be directly mounted on the specimen stage for imaging. b. In contrast, the specimen preparation process for TEM is much more complex and requires experienced engineers to operate. TEM specimens must be extremely thin, typically below 150 nm, or even lower than 30 nm, and as flat as possible. This means that TEM specimen preparation may require more time and expertise.   Type of Images: SEM provides detailed three-dimensional images of the specimen surface, while TEM provides two-dimensional projection images of the internal structure of the specimen. a. Scanning Electron Microscope (SEM) provides three-dimensional images of the surface morphology of the specimen. It is mainly used for morphology analysis. If you need to examine the surface morphology of a material, SEM can be used, but you need to consider the resolution to see if it meets your experimental requirements. b. If you need to understand the internal crys...
The Application of Electron-electron Double Resonance (DEER) Technique in DNA Structure Analysis
The Application of Electron-electron Double Resonance (DEER) Technique in DNA Structure Analysis
Since the discovery of the classic double helix structure of DNA by Watson and Crick in the 1950s, DNA has become the core of life science research. The number and arrangement of the four bases in DNA lead to genetic diversity, and its spatial structure affects gene expression.   In addition to the traditional DNA double helix structure, a special four-stranded DNA structure called G-quadruplex has been discovered in human cells. G-quadruplex is a higher-order structure formed by the folding of DNA or RNA rich in tandem repeats of guanine (G). G-quadruplexes are highly abundant in rapidly dividing cells, such as cancer cells. Therefore, G-quadruplexes can serve as drug targets in cancer research. Investigating the structure of G-quadruplexes and their binding modes with ligands is of great significance for the diagnosis and treatment of cancer cells.   Electron-electron Double resonance (DEER)   Electron-electron double resonance (DEER) using pulsed dipolar electron paramagnetic resonance (PDEPR) has been developed as a reliable and versatile tool for structure determination in structural and chemical biology. DEER combined with site-directed spin labeling (SDSL) techniques can provide distance information at the nanoscale. In the study of G-quadruplex structures, DEER technology combined with SDSL can differentiate different lengths of G-quadruplex dimers and reveal the binding modes of G-quadruplex ligands with dimers.   PDEPR techniques can distinguish different lengths of G-quadruplex dimers.   The spin-label used for distance measurements in DEER experiments is Cu(pyridine)4. The Cu(pyridine)4 complex is covalently bound to G-quadruplexes, and the dipole-dipole interactions between two paramagnetic Cu2+ ions in the π-stacked G-quartet monomers can be measured. This allows for the study of dimer formation.   [Cu2+@A4] (TTLGGG) and [Cu2+@B4] (TLGGGG) are two oligonucleotides with different sequences. Figure 1 and Figure 2 show the DEER experimental results of [Cu2+@A4]2 and [Cu2+@B4]2, respectively. From the DEER results, the average distance between individual Cu2+-Cu2+ ions in [Cu2+@A4]2 dimer is dA = 2.55 nm. The G-quadruplexes at the 3' ends of the G-quartets form G-quadruplex dimers through tail-to-tail stacking, and the gz axes of the two Cu2+ spin labels in the G-quadruplex dimer are arranged in parallel.   Compared to the [Cu2+@A4]2 dimers, the π-stacking distance in [Cu2+@B4]2 is longer (dB-dA = 0.66 nm), confirming the presence of an additional G-quartet in each [Cu2+@B4] monomer, which is consistent with the expected distance. Therefore, DEER measurements can differentiate different lengths of G-quadruplex dimers.   Figure 1 (A) Pulsed EPR spectrum (black line) of the [Cu2+@A4]2 dimer and its corresponding simulation (red line) (34 GHz, 19 K); (B) Background-corrected DEER time-domain traces (black line) at four field positions (a-d) and the b...
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